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タウア・ニン 最新VLSIの基礎
 
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タウア・ニン 最新VLSIの基礎 (単行本)

by Yuan Taur (著), Tak H. Ning (著), 芝原 健太郎 (翻訳)
4.8 out of 5 stars  See all reviews (4 customer reviews)
Price: ￥ 8,190 (Tax Included) & eligible for Free Shipping. Details
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Product Description

Synopsis

This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry. --This text refers to the ペーパーバック edition.


出版社／著者からの内容紹介

講義用 ＣＭＯＳやバイポーラトランジスタの動作を支配するデバイスの基礎を、ディープサブミクロンＶＬＳＩデバイスにとって特に重要なデバイスパラメータや性能因子に重点を置き集約する。
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Product Details

  • 単行本: 610 pages
  • Publisher: 丸善 (2002/09)
  • ISBN-10: 4621070835
  • ISBN-13: 978-4621070833
  • Release Date: 2002/09
  • Product Dimensions: 8.1 x 5.9 x 1.3 inches
  • Average Customer Review: 4.8 out of 5 stars  See all reviews (4 customer reviews)
  • Amazon.co.jp Sales Rank: #177,434 in 本 (See Bestsellers in 本)

    Category Ranking:

    #24 in  本 > 科学・テクノロジー > 工学 > 電気工学 > 集積回路・IC
    #711 in  本 > 科学・テクノロジー > 電気・通信
    #7085 in  本 > コンピュータ・インターネット

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What Do Customers Ultimately Buy After Viewing This Item?

タウア・ニン 最新VLSIの基礎
80% buy the item featured on this page:
タウア・ニン 最新VLSIの基礎 4.8 out of 5 stars (4)
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半導体デバイス―基礎理論とプロセス技術 4.7 out of 5 stars (7)
￥ 6,930
半導体デバイスの基礎 (上) 半導体物性
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半導体デバイスの基礎 (上) 半導体物性 5.0 out of 5 stars (1)
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Customer Reviews

4 Reviews
5 star:
 (3)
4 star:
 (1)
3 star:    (0)
2 star:    (0)
1 star:    (0)
 
 
 
 
 
Average Customer Review
4.8 out of 5 stars (4 customer reviews)
 
 
 
 
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6 of 6 people found the following review helpful:
5.0 out of 5 stars 最先端CMOSデバイス, 2004/4/20
この本を読めば最先端CMOSデバイスがどんなものか理解できるだろう。
無駄なく重要な所が書かれており、定性的かつ定量的でありロジックが
すっきりしている。これをベースにナノスケール極限ＣＭＯＳ集積回路を探求してみてはどうだろうか。
Szeの本のいい部分を集めた良書と言える。
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18 of 21 people found the following review helpful:
5.0 out of 5 stars 半導体デバイスの基礎と最新技術を結ぶ良書, 2002/12/15
pn\MOSoCMOSa...1'§£a¬-￣§"o-°SiGe"§¬a¨°"-1o'" ""...-1￣'- ...1§°"-1§'￣"\°o￣"o...1¨...￣a33￣'a...1¬￣"§-¬￣600\¨a\ MOSaCMOS"짣31oSiGe짣aa...a2"§'°¨"\￣" '...1'§£-¨°!!!¬a'°aa£'¨￣§§¨o¬"-"...-1¨£ \a¨
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6 of 7 people found the following review helpful:
5.0 out of 5 stars 良書, 2003/9/6
まだ、すべてを読みきれていませんが、最新のデバイス物理書籍として購入しました。ポアソン方程式、ボルツマン方程式などデバイスの本で省略されている項目も、詳しく書かれています。

短チャネルデバイス、SOIなど少し前の本には載っていない技術の解説もかなり詳しくされており、それだけでも買う価値があると思います。

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4.0 out of 5 stars なかなか良いです。
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Published on 2003/10/7 by t-tatsumi

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